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Taiwan engineers defeat limits of flash memory

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December 3, 2012 in Business

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(Phys.org)—Taiwan-based Macronix has found a solution for a weakness in flash memory fadeout. A limitation of flash memory is simply that eventually it cannot be used; the more cells in the memory chips are erased, the less useful to store data. The write-erase cycles degrade insulation; eventually the cell fails. “Flash wears out after being programmed and erased about 10,000 times,” said the IEEE Spectrum. Engineers at Macronix have a solution that moves flash memory over to a new life. They propose a “self-healing” NAND flash memory solution that can survive over 100 million cycles.
Lue observed that in coming up with the approach, his team would not be able to lay claim to any new physics principle. “We could have done this ten years ago.” He said it took merely a leap of imagination into a different “regime.”

Read more at: http://phys.org


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1 response to Taiwan engineers defeat limits of flash memory

  1. Taiwan better get ready for a Chinese invasion!!!

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